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High-Temperature Ion Implantation and High-Temperature Annealing Contract Services [SiC, GaN, etc.]

High-temperature ion implantation suitable for the fabrication of devices such as SiC, as well as high-temperature annealing processes for dopant activation, are available!

In compound semiconductors such as SiC (silicon carbide) and GaN (gallium nitride), high-temperature ion implantation and high-temperature annealing for dopant activation are required for device fabrication. Our company responds to requests for high-temperature ion implantation and high-temperature annealing. Additionally, due to the high temperatures during annealing, surface protection with a cap film before annealing is necessary. Our company not only provides high-temperature annealing but also meets the needs for carbon cap film deposition using PBII (Plasma Based Ion Implantation). [Contents] High-temperature ion implantation Cap film deposition High-temperature annealing treatment *For more details, please download the PDF or contact us.